SILICON CARBIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

摘要

A silicon carbide film (90) has first and second main surfaces (P1, P2). The second main surface (P2) has an element formation surface (PE) and a termination surface (PT). The silicon carbide film (90) has a first range (RA) that constitutes a first main surface (P1) and an intermediate surface (PM) opposite to the first main surface (P1), and a second range (RB) that is provided on the intermediate surface (PM) and constitutes the element formation surface (PE). The first range (RA) includes: a first breakdown voltage holding layer (81 A); and a guard ring region (73) partially provided at the intermediate surface (PM) in the termination portion (TM). The second range (RB) has a second breakdown voltage holding layer (81B). The second range (RB) has one of a structure only having the second breakdown voltage holding layer (81B) in the termination portion (TM) and a structure disposed only in the element portion (CL) of the element portion (CL) and the termination portion (TM).