发明名称 |
PREPARING METHOD OF ANTI-REFLECTION FILM HAVING ANTI-PID EFFECT |
摘要 |
Provided is a preparing method of anti-reflection film having anti-PID effect. The method comprises: vacuumizing a furnace tube, holding the temperature in the furnace at 420°C and the pressure as 80 mTorr for 4 minutes; pretreating a silicon slice at 420°C with a nitrous oxide flux of 3.8-4.4 slm and pressure of 1700 mTorr for 3 minutes; testing pressure to keep a inner pressure of the apparatus as a constant value of 50 mTorr for 0.2-0.5 minute; pre-depositing at 420°C, with a ammonia gas flux of 0.1-0.5 slm, a silicane flux of 180 sccm-200 sccm, a nitrous oxide flux of 3.5-4.1 slm, pressure of 1000 mTorr and radio frequency power of 4300 w for 0.3-0.5 minute; depositing a film at 450°C, with a ammonia gas flux of 2000-2200 sccm, a silicane flux of 7000-7500 sccm, a nitrous oxide flux of 2-2.4 slm, pressure of 1700 mTorr and radio frequency power of 4300 w for 3 minutes; blowing and cooling the film at 420°C with a nitrogen gas flux of 6-10 slm, pressure of 10000 mTorr for 5-8 minutes. The deposition steps may be more than 2 steps. The obtained anti-reflection film has anti-PID effect, thus can improve the electricity performance of solar cell slice. |
申请公布号 |
EP2894238(B1) |
申请公布日期 |
2016.09.14 |
申请号 |
EP20130832787 |
申请日期 |
2013.06.20 |
申请人 |
DONGFANG ELECTRIC (YIXING) MAGI SOLAR POWER TECHNOLOGY CO., LTD. |
发明人 |
HUANG, LUN;LU, CHUNHUI;WU, JUNQING;HOU, ZERONG;WANG, JINWEI |
分类号 |
C23C16/02;C23C16/30;C23C16/455;G02B1/113;G02B1/115 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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