发明名称 |
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THEM |
摘要 |
A semiconductor device is provided with a drain electrode 22, a semiconductor base plate 32, an electric current regulation layer 42 covering a part of a surface of the semiconductor base plate 32 and leaving a non-covered surface 55 at the surface of the semiconductor base plate 32, a semiconductor layer 50 covering a surface of the electric current regulation layer 42, and a source electrode 62 formed at a surface of the semiconductor layer 50. A drift region 56, a channel forming region 54, and a source region 52 are formed within the semiconductor layer 50. The drain electrode 22 is connected to a first terminal of a power source, and the source electrode 62 is connected to a second terminal of the power source. With this semiconductor layer 50, it is possible to increase withstand voltage or reduce the occurrence of current leakage. |
申请公布号 |
EP1815523(B1) |
申请公布日期 |
2016.09.14 |
申请号 |
EP20050828962 |
申请日期 |
2005.11.14 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
SUGIMOTO, MASAHIRO;UESUGI, TSUTOMU;UEDA, HIROYUKI;SOEJIMA, NARUMASA;KACHI, TETSU |
分类号 |
H01L29/812;H01L29/06;H01L29/08;H01L29/20;H01L29/41;H01L29/778;H01L29/78 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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