发明名称 パターン形成方法
摘要 A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A− represents —N−—SO2—RD, —COO−, —O− or —SO3−. —SO3− does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation. -A− X+  (1)
申请公布号 JP5991402(B2) 申请公布日期 2016.09.14
申请号 JP20150086647 申请日期 2015.04.21
申请人 JSR株式会社 发明人 榊原 宏和;堀 雅史;古川 泰一;伊藤 亘史
分类号 G03F7/004;C08F220/18;G03F7/038;G03F7/039;G03F7/20;G03F7/32 主分类号 G03F7/004
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