| 摘要 |
The present invention is a fluorohydrocarbon represented by R-F (wherein R represents an isobutyl group or a t-butyl group), the fluorohydrocarbon having a purity of 99.9% by volume or more and a total butenes content of 1,000 ppm by volume or less; a use of the fluorohydrocarbon as a plasma etching gas; and a plasma etching method comprising selectively subjecting an inorganic nitride film stacked on silicon or a silicon oxide film to plasma etching using the fluorohydrocarbon. |
