发明名称 CIRCUIT ARRANGEMENT AND METHOD FOR GATE-CONTROLLED POWER SEMICONDUCTOR DEVICES
摘要 A switch module (11) is provided and includes a collector connection (18), an emitter connection (19), and a gate connection (21). The switch module (11) includes a plurality of parallel connected switching elements (17a, 17b, ..., 17m), e.g., IGBTs, each having a collector electrode (22) electrically connected to the collector connection (18), an emitter electrode (23) electrically connected to the emitter connection (19), and a gate electrode (24) electrically connected to the gate connection (21). A fault protection device (26) is operatively electrically connected between the gate connection (21) and the switching elements (17a, 17b, ..., 17m) and comprises passive electrical components (e.g., first resistances 36a, 36b, ..., 36m and second resistances 38a, 38b, ...., 38n) which are selected such that in the event of a fault in at least one of the plurality of switching elements, a gate-emitter voltage is provided to the gate electrodes (24) of non-faulty switching elements in a passive manner. The applied gate-emitter voltage is sufficient to switch at least some of the non-faulty switching elements to a conducting state or to maintain them in a conducting state, e.g., a gate-emitter voltage that exceeds the voltage threshold of the switching elements is applied to the gate electrodes (24) of the non-faulty switching elements.
申请公布号 EP3065297(A1) 申请公布日期 2016.09.07
申请号 EP20160157999 申请日期 2016.03.01
申请人 GE ENERGY POWER CONVERSION TECHNOLOGY LTD 发明人 BRUECKNER, THOMAS;JAKOB, ROLAND
分类号 H03K17/082;H03K17/081;H03K17/0814 主分类号 H03K17/082
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