发明名称 フラッシュメモリモジュール
摘要 PROBLEM TO BE SOLVED: To achieve high reliability and long life of a semiconductor storage device that uses a nonvolatile semiconductor memory as a storage medium.SOLUTION: A semiconductor storage device stores management information that includes, for each block of a nonvolatile semiconductor memory, information indicating at least either one of a recent programming time that is a time when data is recently programmed in a block 202 and a recent erasure time that is a time when erasure processing is recently performed for the block. The semiconductor storage device controls a timing for programming data in the block on the basis of at least either one of the recent programming time and recent erasure time of the block; and/or controls a timing for performing erasure processing for the block on the basis of the recent programming time of the block.
申请公布号 JP5989156(B2) 申请公布日期 2016.09.07
申请号 JP20150024112 申请日期 2015.02.10
申请人 株式会社日立製作所 发明人 鈴木 彬史
分类号 G06F12/16 主分类号 G06F12/16
代理机构 代理人
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