发明名称 ガスバリア性フィルムの製造方法及び電子デバイス
摘要 PROBLEM TO BE SOLVED: To provide a gas barrier film which exhibits very excellent gas barrier performance as a phase difference film substrate and good productivity, and can be applied to an OLED display, provide a method of manufacturing the gas barrier film which exhibits high barrier performance, excellent bending resistance and smoothness, and has cutting suitability, and provide an electronic device using the gas barrier film.SOLUTION: In a method of manufacturing a gas barrier film having a gas barrier layer formed by irradiating with vacuum ultraviolet light after a process of applying and drying a composition containing a solvent, polysilazane, and an amine compound on a surface of a base material 0, the solvent contains 20-50 mass% of a solvent component of which a Hansen SP value distance Ra with the base material 0 is 8-14, and a boiling point is 70-110°C.
申请公布号 JP5987562(B2) 申请公布日期 2016.09.07
申请号 JP20120191865 申请日期 2012.08.31
申请人 コニカミノルタ株式会社 发明人 高木 宏司
分类号 B05D7/24;B32B9/00 主分类号 B05D7/24
代理机构 代理人
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