| 摘要 |
PROBLEM TO BE SOLVED: To form a pattern including an aperiodic part finer than the resolution limit of a UV exposure apparatus efficiently.SOLUTION: An electron beam exposure apparatus 10 comprises: a multi-beam generation system 20a generating a large number of sub-beams 36 of an electron beam; a beam blanking array member 30 in which many rectangular openings 31 irradiated with the sub-beams 36 are formed; a modulator 40 which leads a sub-beam 36 passing through an opening selected from many openings 31 to a wafer W; and a deflection projection system 20b capable of deflecting a sub-beam 36 passed through an opening 31 selected by the modulator 40 at least in the X direction and forming a reduced image of the opening 31 on the surface of the wafer W. |
