| 摘要 |
A resist patterning method according to the present invention includes: a resist layer forming step S101 of forming a resist layer 12 on a substrate 11; an activating step S103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S110 of developing the resist layer. |
