| 摘要 |
A method for producing a SiC substrate with an epitaxial layer, which can prevent inventory of wafers from unduly increasing and wasteful production, is provided. This is achieved by a method for producing a SiC substrate with an epitaxial layer one at a time, the method comprising growing an epitaxial layer and growing a SiC substrate on a seed crystal substrate, and the method further comprising removing the obtained SiC substrate with the epitaxial layer from the seed crystal substrate. |
