| 摘要 |
In a method for etching a first region, a sequence is performed one or more times. Each time of the sequence includes a first process of forming deposits containing fluorocarbon on a workpiece, and a second process of etching the first region by radicals of the fluorocarbon included in the deposits. After the sequence is performed one or more times, plasma of a second processing gas containing a fluorocarbon gas is generated, and the first region is further etched. |
