发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 Provided are a semiconductor device with improved product reliability, and a method to fabricate the same. The semiconductor device comprises: a first active pin extended in a first direction; a second active pin separated apart from the first active pin in a second direction intersecting with the first direction, extended in the first direction, and having a long side which is shorter than that of the first active pin; a first dummy gate overlapping one ends of the first active pin and the second active pin to be extended in the second direction; a first metal gate intersecting with the first active pin, overlapping the other end of the second active pin to be extended in the second direction; and a first insulation gate intersecting with the first active pin and extended in the second direction, wherein the first insulation gate is extended to the inside of the first active pin.
申请公布号 KR20160102788(A) 申请公布日期 2016.08.31
申请号 KR20150025303 申请日期 2015.02.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, SANG JINE;BAI, KEUN HEE;YEO, KYOUNG HWAN;YOON, BO UN;KWON, KEE SANG;KIM, DO HYOUNG;JEON, HA YOUNG;HA, SEUNG SEOK
分类号 H01L29/78 主分类号 H01L29/78
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