摘要 |
Provided are a semiconductor device with improved product reliability, and a method to fabricate the same. The semiconductor device comprises: a first active pin extended in a first direction; a second active pin separated apart from the first active pin in a second direction intersecting with the first direction, extended in the first direction, and having a long side which is shorter than that of the first active pin; a first dummy gate overlapping one ends of the first active pin and the second active pin to be extended in the second direction; a first metal gate intersecting with the first active pin, overlapping the other end of the second active pin to be extended in the second direction; and a first insulation gate intersecting with the first active pin and extended in the second direction, wherein the first insulation gate is extended to the inside of the first active pin. |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, SANG JINE;BAI, KEUN HEE;YEO, KYOUNG HWAN;YOON, BO UN;KWON, KEE SANG;KIM, DO HYOUNG;JEON, HA YOUNG;HA, SEUNG SEOK |