| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that allows downsizing the semiconductor device and simultaneously forming a plurality of resistance elements having different resistance values, and to provide the semiconductor device manufactured by the method.SOLUTION: A method of manufacturing a semiconductor device includes: a step of forming, on a substrate, a resist having a first opening and a second opening having a narrower width than the first opening; a spatter deposition step of simultaneously forming, by spatter deposition, a first resistance element and a second resistance element in a portion exposed by the first opening and a portion exposed by the second opening of the substrate, respectively; a step of removing the resist after the spatter deposition step; and a step of forming metal layers on both sides of the first resistance element and on both sides of the second resistance element after the removal of the resist. The second resistance element has a narrower width than the first resistance element, and the second resistance element has a thinner film thickness than the first resistance element. |
