发明名称 |
FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE |
摘要 |
A field effect transistor and a semiconductor device are provided which enable a drain breakdown voltage in an off state and a drain breakdown voltage in an on state to be improved respectively. There are provided therein a field oxide film (31) disposed on an N-type drift region (20) positioned between a channel region of a silicon substrate (1) and an N-type drain (9), an N-type drift layer (21) disposed beneath the drift region (20) of the silicon substrate (1) and the drain (9), and an embedded layer (51) higher in P-type impurity concentration than the silicon substrate (1). The embedded layer (51) is disposed beneath the drift layer (21) except for below at least a portion of the drain (9) in the silicon substrate (1). |
申请公布号 |
EP2911188(A4) |
申请公布日期 |
2016.08.31 |
申请号 |
EP20130846977 |
申请日期 |
2013.10.11 |
申请人 |
ASAHI KASEI MICRODEVICES CORPORATION |
发明人 |
MATSUDA, JUN-ICHI |
分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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