| 摘要 |
An image sensor (10) comprises a PMOS circuit layer (12) comprising an array of pixel elements (122). Each pixel element comprises a pinned photodiode, and an amplifier, the amplifier comprising P-FET transistors, and Analog to Digital Converter (ADC) circuit portions comprising P-FETs (123, 124). The image sensor also comprises a CMOS circuit layer (18) comprising supporting pixel circuitry, the supporting pixel circuitry comprising N-FET transistors (181). Each pixel element in the PMOS layer is electrically connected to supporting pixel circuitry in the CMOS layer. |
