| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a cell size without need of consideration in variations in processing dimensions of a tunnel window and a select gate, and alignment accuracy of the select gate, and to provide a manufacturing method therefor.SOLUTION: A manufacturing method for a semiconductor device 1 selectively provided with a nonvolatile memory cell 7 on a semiconductor substrate 2 comprises the steps of: selectively forming a select gate 19 in an active region 5 for the nonvolatile memory cell 7 on a gate insulating film 23; forming an n-type tunnel diffusion layer 11 by introducing an impurity with respect to the select gate 19 in a self-alignment manner; and removing a part of the gate insulating film 23 with respect to the select gate 19 in the self-alignment manner and then forming a tunnel window 25 by thermal oxidation. |
