| 摘要 |
PROBLEM TO BE SOLVED: To provide a solar cell including a structure capable of inhibiting carrier recombination at a heterointerface of a silicon layer and a Ga-rich InGaZnO amorphous oxide semiconductor layer.SOLUTION: A solar cell includes a p-type silicon layer and two and more amorphous oxide semiconductor layers having Ga content rates different from each other. The amorphous oxide semiconductor layers having different Ga content rates are arranged on the P-type silicon layer and contains In, Ga and Zn. The Ga content rate of the amorphous oxide semiconductor layer arranged closer to the p-type silicon layer is lower than the Ga content rate of the amorphous oxide semiconductor layer arranged at a farther position from the p-type silicon layer. |
