| 摘要 |
A manufacturing method of a nitride semiconductor device is disclosed. The method comprises the steps of: forming a GaN layer on a substrate; alternately laminating insulation layers and regrowth GaN layers on the GaN layer; etching a structure in which the insulation layers and the regrowth GaN layers are alternately laminated so as to have a preset source structure, a preset drain structure, and a preset channel structure; eliminating insulation layers arranged among the plurality of regrowth GaN layers in the channel structure; and forming a gate electrode in a shape of surrounding the plurality of regrowth GaN layers in the channel structure. Therefore, the method simplifies manufacturing processes by using an epitaxial lateral overgrowth method. |
