| 摘要 |
A method for manufacturing an integrated circuit includes the steps of: forming above an upper surface of a substrate (5) at least one dielectric layer (15) extending on an underlying surface (12), the dielectric layer (15) having an upper surface (25) and a flank (40) extending between the upper surface and the underlying surface (12); and forming an electrical structure (70) in one piece in an electrically conducting material including a structural element (75) extending on the upper surface (25) of the dielectric layer (15) and an interconnection element (80) extending from the structural element (75) along the flank (40) as far as the underlying surface. The flank has a height of more than 10 mum, and the electrical structure is formed by depositing the electrically conducting material by simultaneously depositing the structural element on the upper surface of the dielectric layer and the interconnection element on the flank. |
