| 摘要 |
The memory cell of a memory device comprises a MOS capacitor (14; 114) having a n-type gate and a n-type well, connected in series with a first switch (30; 130) to temporarily apply a breakthrough voltage (V M ) across the n-type gate and the n-type well to generate a permanent conductive breakthrough structure (22) between the n-type gate and the n-type well. |
