发明名称 表示装置
摘要 A manufacture process of a thin film transistor mounted on an EL display device is simplified. A thin film transistor is manufactured by stacking a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film; forming a first resist mask over the stacked films; performing first etching to form a thin-film stack body; performing second etching by side etching is conducted on the thin-film stack body to form a gate electrode layer; and forming a source and drain electrode layer and the like with use of a second resist mask. An EL display device is manufactured using the thin film transistor.
申请公布号 JP5982550(B2) 申请公布日期 2016.08.31
申请号 JP20150200980 申请日期 2015.10.09
申请人 株式会社半導体エネルギー研究所 发明人 宮入 秀和;小森 茂樹;伊佐 敏行;梅崎 敦司
分类号 G09F9/30;H01L27/32;H01L29/786;H01L51/50;H05B33/14 主分类号 G09F9/30
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