| 摘要 |
A diode is provided with a pillar region formed so as to extend between a barrier region and an anode electrode, contact the barrier region, and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region; and a barrier height adjusting region formed so as to be located between the pillar region and the anode electrode, and contact the pillar region and the anode electrode. The barrier height adjusting region includes at least one component selected from the group consisting of a second conductivity type semiconductor having a concentration lower than that of an anode region, the first conductivity type semiconductor having a concentration lower than that of the pillar region, and an i-type semiconductor. The barrier height adjusting region and the anode electrode are connected through a Schottky junction. |
