| 摘要 |
A semiconductor pressure sensor of the invention, includes: a base body (1) including: a lead frame (4) having a first surface and a second surface; and a support (5) that supports the lead frame (4) and is made of a resin; a pressure sensor chip (2) provided on the first surface of the lead frame (4); and a controller (3) that is provided on the second surface of the lead frame (4), is implanted in the support (5), is formed in the shape having a plurality of surfaces, includes a stress relief layer (32, 33, 34, 35, 36) that is formed on at least one of the plurality of surfaces and has a Young's modulus lower than that of the support (5), and receives a sensor signal output from the pressure sensor chip (2) and thereby outputs a pressure detection, the pressure sensor chip (2) at least partially overlapping the controller (3) in plan view. |
