| 摘要 |
Disclosed are an image sensor and an imaging device. According to an embodiment of the present invention, in an image sensor of a multilayered sensor structure including a plurality of sensing pixels, each of the plurality of sensing pixels includes: a microlens concentrating light; a first photoelectric conversion unit converting the light in a first wavelength band into an electric signal; and a second photoelectric conversion unit formed on a substrate, and converting the incident light into an electric signal. A central axis of the second photoelectric conversion unit is spaced from an optic axis of the microlens. The image sensor has high sensibility and performs an accurate and fast operation. |
