| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon single crystal in which the silicon single crystal can be suitably lifted even at a corner part of a silica glass crucible.SOLUTION: A lift condition of a silicon single crystal after the level of a silicon melt reaches a corner part is determined based upon the three-dimensional shape of an inner surface of a silica glass crucible. A three-dimensional distribution of surface roughness of the inner surface is found by: moving an inner distance measurement part along the inner surface of the silica glass crucible not in contact; irradiating a plurality of measurement points on a movement route with laser light from the inner distance measurement part obliquely to the inner surface of the silica glass crucible; measuring reflected light of the laser light and changing the distance between the inner distance measurement part and the inner surface and the emission direction of the laser light so that two peaks are observed; measuring the inner surface distance between the inner distance measurement part and the inner surface at the position of a peak on an inner surface side between the two peaks; and relating three-dimensional coordinates of the respective measurement points to the inner surface distance. |
