| 摘要 |
A method for formulating a CIGS nanoparticle-based ink, which can be processed to form a thin film with a crack-free limit (CFL) of 500 nm or greater, comprises: dissolving or dispersing Cu(In,Ga)S2 and Cu(In,Ga)Se2 nanoparticles; mixing the nanoparticle solutions/dispersions and adding oleic acid to form an ink; depositing the ink on a substrate; annealing to remove the organic components of the ink formulation; forming a film with a CFL ≧500 nm; and, repeating the deposition and annealing process to form a CIGS film having a thickness ≧1 μm. The film so produced may be incorporated into a thin film photovoltaic device. |
