| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which can be achieved by a standard CMOS process capable of microfabrication and which is capable of a high-voltage operation.SOLUTION: A semiconductor integrated circuit comprises: an output buffer 30 including an output P-channel transistor 31 and an output N-channel transistor 32 which are inserted in series between a high-voltage side power supply node (VPP=10 V) and a low-voltage side power supply node (VSS=0 V); and a level shifter 40 for generating a high-voltage side logic signal having an upper limit voltage VPP=10 V and a lower limit voltage 5 V, and a low-voltage side logic signal having an upper limit voltage VD3=3 V and a lower limit voltage 0 V, from an output signal of an inverter 71 having an upper limit voltage VD3=3 V and a lower limit voltage VS=0 V, and supplying the high-voltage side logic signal and the low-voltage side logic signal to respective gates of the output P-channel transistor 31 and the output N-channel transistor 32. |
