| 摘要 |
The present invention relates to a chemical vapor deposition system using an initiator. According to the present invention, the chemical vapor deposition system using an initiator comprises a vaporization source, a vacuum chamber, a substrate providing device and a supporter. The vaporization source vaporizes a deposition material to be deposited on a substrate and includes a plurality of vaporization nozzles discharging the deposition material. The vacuum chamber has the vaporization source positioned inside and provides a space for deposition of the deposition material. The substrate providing device is included in the vacuum chamber and provides a substrate, on which the deposition material is deposited. The supporter is included in the vacuum chamber, receives the substrate from the substrate providing device, and supports the substrate to allow the deposition material to be deposited on the substrate. The supporter has a curved external surface to maintain uniform intervals between the vaporization nozzles and the substrate while the substrate is supported by the supporter. An arrangement of the vaporization nozzles forms a virtual curved shape corresponding to the external surface of the supporter such that the deposition material is deposited on the flexible substrate to have a uniform deposition thickness, thereby improving production quality. The supporter continuously cools the lower surface of the flexible substrate, thereby restricting damage to the substrate due to non-uniform cooling. |
