| 摘要 |
This invention provides a mask blank in which a thin film for transfer pattern formation is provided on a main surface of a transparent substrate. The thin film is made of a material containing a transition metal and silicon and further containing at least one of oxygen and nitrogen. The thin film has as its surface layer an oxide layer with an oxygen content higher than that of a region, other than the surface layer, of the thin film. The thin film is formed so that the thickness of its central portion is greater than that of its outer peripheral portion on the main surface side. The oxide layer is formed so that the thickness of its central portion is greater than that of its outer peripheral portion on the main surface side. |
