发明名称 |
PIEZOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT |
摘要 |
Provided are a piezoelectric element having high stability, which operates with high efficiency, and a method for manufacturing the piezoelectric element. The piezoelectric element (10) has a laminate structure in which a first electrode (14), a first piezoelectric film (16), a second electrode (18), an adhesion layer (20), an interlayer (22), a third electrode (24), a second piezoelectric film (26), and a fourth electrode (28) are laminated in this order on a silicon substrate (12). The interlayer (22) is formed of a material different from that of the second electrode (18) and has a thickness of 0.4 μm to 10 μm. A device having a diaphragm structure or a cantilever structure is formed by removing a part of the silicon substrate (12). The respective layers (14 to 28) laminated on the silicon substrate (12) can be formed using a thin film formation method represented by a vapor phase epitaxial method. |
申请公布号 |
US2016240768(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201615137142 |
申请日期 |
2016.04.25 |
申请人 |
FUJIFILM Corporation |
发明人 |
FUJII Takamichi;NAONO Takayuki |
分类号 |
H01L41/083;H01L41/08;H01L41/27;H01L41/047 |
主分类号 |
H01L41/083 |
代理机构 |
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代理人 |
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主权项 |
1. A piezoelectric element comprising:
a silicon substrate; a first electrode that is laminated on the silicon substrate; a first piezoelectric film that is laminated on the first electrode; a second electrode that is laminated on the first piezoelectric film; an adhesion layer that is laminated on the second electrode; an interlayer that is laminated on the adhesion layer, is formed of a material different from that of the second electrode, and has a thickness of 0.4 μm to 10 μm; a third electrode that is laminated on the interlayer; a second piezoelectric film that is laminated on the third electrode; and a fourth electrode that is laminated on the second piezoelectric film. |
地址 |
Tokyo JP |