| 发明名称 |
Top emitting semiconductor light emitting device |
| 摘要 |
Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate. |
| 申请公布号 |
US2016240735(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201414783780 |
申请日期 |
2014.03.31 |
| 申请人 |
Koninklijke Philips N.V. |
发明人 |
Moran Brendan Jude;de Samber Marc Andre;Basin Grigoriy;Sweegers Norbertus Antonius Maria;Butterworth Mark Melvin;Vampola Kenneth;Mazuir Clarisse |
| 分类号 |
H01L33/20;H01L33/32;H01L33/46;H01L33/00;H01L33/56;H01L33/62;H01L25/075;H01L33/06;H01L33/50 |
主分类号 |
H01L33/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device comprising:
a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region; a growth substrate attached to the semiconductor structure, the growth substrate having at least one angled sidewall; and a reflective layer disposed on the angled sidewall; wherein the reflective layer is arranged such that a majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate; wherein a wavelength converting layer is disposed over the first surface of the growth substrate. |
| 地址 |
Eindhoven NL |
