发明名称 DOUBLE-PASS PHOTODIODE WITH EMBEDDED REFLECTOR
摘要 A photodiode, in particular photodiode for data transmission applications, can include a semiconductor substrate, which can also be referred to as a substrate layer, and a first semiconductor layer supported by, for instance arranged on, the semiconductor substrate. The photodiode can further include a second semiconductor layer supported by, for instance arranged on, the first semiconductor layer. The photodiode can further include an optical semiconductor mirror arranged between the semiconductor substrate and the first semiconductor layer such that when incident light passes through the second semiconductor layer and the first semiconductor layer along a first direction a first time, the incident light is reflected by the optical semiconductor mirror so as to pass through the first semiconductor layer a second time, which can also be referred to as a second pass. Thus, the photodiode can also be referred to as a double-pass photodiode.
申请公布号 US2016240718(A1) 申请公布日期 2016.08.18
申请号 US201415027840 申请日期 2014.10.09
申请人 FCI AMERICAS TECHNOLOGY LLC 发明人 GIZIEWICZ Wojciech
分类号 H01L31/105;H01L31/18;H01L31/0232 主分类号 H01L31/105
代理机构 代理人
主权项 1. A photodiode comprising: a semiconductor substrate; a first semiconductor layer supported by the semiconductor substrate; a second semiconductor layer supported by the first semiconductor layer; and an optical semiconductor mirror arranged between the semiconductor substrate and the first semiconductor layer such that when incident light passes through the second semiconductor layer and the first semiconductor layer along a first direction a first time, the incident light is reflected by the optical semiconductor mirror so as to pass through the first semiconductor layer a second time.
地址 Carson City NV US
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