OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

摘要

An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

主权项

1. A semiconductor device comprising:
a first metal oxide film; an oxide semiconductor film over the first metal oxide film; a second metal oxide film over the oxide semiconductor film; a gate insulating film over the second metal oxide film; and a gate electrode over the gate insulating film, wherein the oxide semiconductor film comprises an In—Ga—Zn—O-based metal oxide, wherein the second metal oxide film comprises a Ga—Zn—O-based metal oxide, and wherein an amount of substance of zinc oxide with respect to gallium oxide is lower than 50% in the Ga—Zn—O-based metal oxide.