SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A device includes a first and a second semiconductor-layer. The second semiconductor-layer is on the first semiconductor-layer, and has a first and a second side-surface. A first gate-dielectric is on the first semiconductor-layer. A second gate-dielectric is on the first side-surface. A gate has a bottom surface facing the first semiconductor-layer, and a third side-surface facing the first side-surface. A first diffusion-layer of a first conductivity-type is in a region in the second semiconductor-layer on a side of the second side-surface, and forms a junction with a region in the second semiconductor-layer on a side of the first side-surface. A silicide is on the second side-surface. A source of the first conductivity-type is in the first semiconductor-layer on a side of the third side-surface. A drain layer of a second conductivity-type is in the first semiconductor-layer on a side of a fourth side-surface of the gate electrode.

主权项

1. A semiconductor device comprising:
a first semiconductor layer; a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having a first side surface and a second side surface on an opposite side to the first side surface; a first gate dielectric film on the first semiconductor layer; a second gate dielectric film on the first side surface of the second semiconductor layer; a gate electrode having a bottom surface facing a surface of the first semiconductor layer via the first gate dielectric film, and a third side surface facing the first side surface of the second semiconductor layer via the second gate dielectric film; a first diffusion layer of a first conductivity type in a region of the second semiconductor layer on a side of the second side surface, the first diffusion layer forming a junction part with a region of the second semiconductor layer on a side of the first side surface; a silicide layer on the second side surface of the second semiconductor layer, the silicide layer connecting to the first diffusion layer; a source layer of the first conductivity type in the first semiconductor layer on a side of the third side surface of the gate electrode, the source layer being electrically connected to the first diffusion layer and the silicide layer; and a drain layer of a second conductivity type in the first semiconductor layer on a side of a fourth side surface of the gate electrode on an opposite side to the third side surface.