发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A silicon carbide semiconductor device includes a silicon carbide semiconductor layer having a main surface, the main surface of the silicon carbide semiconductor layer being provided with a trench having a closed shape when seen in plan view, the trench including a bottom, a plurality of sidewalls continuous with the bottom, and a sidewall-connecting corner portion at a connection portion between two adjacent sidewalls of the plurality of sidewalls, the silicon carbide semiconductor device further including a gate insulating film covering the bottom and the sidewalls of the trench, and a gate electrode provided on the gate insulating film, between the bottom and an upper end of the trench, the thickness of the gate insulating film at the sidewall-connecting corner portion of the trench being greater than the thickness of the gate insulating film at a portion other than the sidewall-connecting corner portion. |
申请公布号 |
US2016240656(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201415026370 |
申请日期 |
2014.08.13 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
Masuda Takeyoshi |
分类号 |
H01L29/78;H01L21/04;H01L29/66;H01L29/16;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A silicon carbide semiconductor device, comprising a silicon carbide semiconductor layer having a main surface,
the main surface of the silicon carbide semiconductor layer being provided with a trench having a closed shape when seen in plan view, the trench including a bottom, a plurality of sidewalls continuous with the bottom, and a sidewall-connecting corner portion at a connection portion between two adjacent sidewalls of the plurality of sidewalls, the silicon carbide semiconductor device further comprising: a gate insulating film covering the bottom and the sidewalls of the trench; and a gate electrode provided on the gate insulating film, between the bottom and an upper end of the trench, the thickness of the gate insulating film at the sidewall-connecting corner portion of the trench being greater than the thickness of the gate insulating film at a portion other than the sidewall-connecting corner portion. |
地址 |
Osaka-shi JP |