SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device including a plurality of trenches, including an emitter electrode; a floating layer of a first conduction type provided between adjacent trenches; and a low-dielectric-constant film provided between the floating layer and the emitter electrode, in which a dielectric constant of the low-dielectric-constant film is less than 3.9. Also provided is a semiconductor device further including a gate electrode formed in the trenches, in which capacitance between the gate electrode and the floating layer is greater than capacitance between the emitter electrode and the floating layer.

主权项

1. A semiconductor device comprising:
an emitter electrode; a plurality of trenches; a floating layer of a first conduction type provided between adjacent trenches of the plurality of trenches; and a low-dielectric-constant film provided between the floating layer and the emitter electrode, wherein a dielectric constant of the low-dielectric-constant film is less than 3.9.