| 主权项 |
1. A semiconductor device provided with a bipolar transistor, comprising:
a semiconductor substrate; a first semiconductor region of a first conductivity type which is formed in the semiconductor substrate; a second semiconductor region of the first conductivity type and a third semiconductor region of a second conductivity type opposite to the first conductivity type which are formed to be spaced apart from each other in the first semiconductor region; an element isolation insulating film which is formed on a main surface of the semiconductor substrate between the second semiconductor region and the third semiconductor region; a first electrode which is formed on the element isolation insulating film; an interlayer insulating film which is formed on the semiconductor substrate so as to cover the element isolation insulating film and the first electrode; and a first plug, a second plug, and a third plug which are buried in the interlayer insulating film, wherein an impurity concentration of the second semiconductor region is higher than an impurity concentration of the first semiconductor region, the first semiconductor region and the second semiconductor region are base semiconductor regions of the bipolar transistor, the third semiconductor region is an emitter semiconductor region of the bipolar transistor, the first plug is disposed on the third semiconductor region and is electrically connected to the third semiconductor region, the second plug is disposed on the first electrode and is electrically connected to the first electrode, the third plug is disposed on the second semiconductor region and is electrically connected to the second semiconductor region, the first plug and the second plug are electrically connected, the first electrode is formed between the second semiconductor region and the third semiconductor region when seen in a plan view, and at least a part of the first electrode is buried in a first trench which is formed in the element isolation insulating film. |
