SEMICONDUCTOR DEVICE

摘要

The present invention makes it possible to lower the on resistance of a semiconductor element without hindering the function of a diffusion prevention film in a semiconductor device having the semiconductor element that uses a wire in a wiring layer as a gate electrode and has a gate insulation film in an identical layer to the diffusion prevention film. A first wire and a gate electrode are embedded into the surface layer of an insulation layer comprising a first wiring layer. A diffusion prevention film is formed between the first wiring layer and a second wiring layer. A gate insulation film is formed by: forming a recess over the upper face of the diffusion prevention film in the region overlapping with the gate electrode and around the region; and thinning the part.

主权项

1. A semiconductor device, comprising:
a first wiring layer including first wirings embedded into a first interlayer insulating film; a second wiring layer formed over the first wiring layer including second wirings and via electrodes embedded into a second interlayer insulating film; a gate electrode comprised one of the first wirings; a first gate insulating film formed between the first wiring layer and the second wiring layer and located over the gate electrode; a second gate insulating over the first gate insulating film; a diffusion prevention film covering the first wirings except the gate electrode and formed between the first wiring layer and the second wiring layer; and a semiconductor film formed between the first wiring layer and the second wiring layer and located over the second gate insulating film; wherein the second wirings are coupled to the semiconductor film through the via electrodes.