FIELD-STOP REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR

摘要

A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method thereof. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer (1) departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure (10) is provided with a back-surface metal layer (12). A plurality of polysilicon filling structures (11) which penetrate into the electric field stop layer (1) from the back-surface P-type structure (10) are formed in the active region (100).

主权项

1. A field-stop reverse conducting insulated gate bipolar transistor, comprising:
a peripheral terminal structured: and an active region surrounded by the terminal structure; a substrate of the field-stop reverse conducting insulated gate bipolar transistor being an N-type substrate, a back side of the substrate being provided with an N-type field stop layer, a side of the field stop layer away from the substrate being provided with a back P-type structure, a surface of the back P-type structure away from the substrate being provided with a back metal layer; characterized in that, a plurality of polysilicon filling structures are formed in the active region extending through the back P-type structure into the field stop layer, the plurality of polysilicon filling structures are not provided in the terminal structure.