发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A semiconductor device has a p-type metal oxide semiconductor layer; a source electrode connected with the p-type metal oxide semiconductor layer; a drain electrode connected with the p-type metal oxide semiconductor layer; and a gate electrode arranged to oppose to a part of the p-type metal oxide semiconductor layer. The gate electrode and the drain electrode are separated from each other in a top view. |
申请公布号 |
US2016240564(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201615139782 |
申请日期 |
2016.04.27 |
申请人 |
Renesas Electronics Corporation |
发明人 |
SUNAMURA Hiroshi;KANEKO Kishou;FURUTAKE Naoya;SAITOU Shinobu;HAYASHI Yoshihiro |
分类号 |
H01L27/12;H01L29/786;H01L29/423;H01L29/66;H01L21/477;H01L29/24;H01L27/092 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |