SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

An object is to provide a display device with high productivity by reducing the number of masks and the number of steps. Another object is to provide a display device with high yield. A pixel transistor and a driver transistor are formed over a substrate having an insulating surface in the same step. A pixel electrode electrically connected to the pixel transistor is one electrode. The other electrode is supplied with a fixed potential. A region where a pair of electrodes overlap with each other is used as a capacitor. Accordingly, the number of masks and steps are reduced to provide a display device with high productivity.

主权项

1. A semiconductor device comprising:
a first transistor comprising a gate electrode over a substrate; a first electrode electrically connected to the first transistor; a second transistor comprising a first gate electrode over the substrate; a second electrode overlapping with the first gate electrode of the second transistor; and a third electrode over the substrate, the third electrode being supplied with a fixed potential, wherein the second electrode and the third electrode are formed from a same film comprising a light-transmitting material, and wherein a capacitor is formed in a region where the first electrode and the third electrode overlap with each other with an insulating film provided therebetween.