发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 According to one embodiment, a semiconductor memory device includes first plate-like members, a first wiring, a second plate-like member, a second wiring, first to third semiconductor pillars, a memory film, first to third contacts, first to third plugs, and third wirings. The first wiring is placed between two adjacent ones of the first plate-like members. The second plate-like member is placed on the first wiring. The second wiring is placed between the first plate-like member and the second plate-like member. The first contact is connected to the first semiconductor pillar. The first plug is connected to the first contact. Distance between the central axis of the first plug and the central axis of the second plug in the second direction is different from distance between the central axis of the second plug and the central axis of the third plug.
申请公布号 US2016240547(A1) 申请公布日期 2016.08.18
申请号 US201514849970 申请日期 2015.09.10
申请人 Kabushiki Kaisha Toshiba 发明人 TAGAMI Masayoshi;FUKUZUMI Yoshiaki
分类号 H01L27/115 主分类号 H01L27/115
代理机构 代理人
主权项 1. A semiconductor memory device comprising: a plurality of first plate-like members extending in a first direction, the plurality of first plate-like members being spaced from each other in a second direction, and the second direction crossing the first direction; a first wiring placed between two adjacent ones of the plurality of first plate-like members, and the first wiring extending in the first direction; a second plate-like member placed on the first wiring, and the second plate-like member extending in the first direction; a second wiring placed between one of the first plate-like members and the second plate-like member, and the second wiring extending in the first direction; first to third semiconductor pillars extending in a third direction, the third direction crossing both the first direction and the second direction, and the first to third semiconductor pillars piercing the first wiring and the second wiring; a memory film provided between the first wiring and one of the first to third semiconductor pillars; first to third contacts provided on the first to third semiconductor pillars, and the first to third contacts being connected to the first to third semiconductor pillars, respectively; first to third plugs provided on the first to third contacts, the first to third plugs being connected to the first to third contacts, respectively, central axes of the first to third plugs being shifted with respect to central axes of the first to third contacts, respectively, the first to third plugs being arranged in this order in the second direction, and distance between the central axis of the first plug and the central axis of the second plug in the second direction being different from distance between the central axis of the second plug and the central axis of the third plug in the second direction; and third wirings provided on the first to third plugs, the third wirings extending in the second direction, and the third wirings being connected to the first to third plugs, respectively.
地址 Minato-ku JP