发明名称 NON-VOLATILE MEMORY DEVICE
摘要 A non-volatile memory device includes: a floating gate having a plurality of fingers; a first coupling unit including an active control gate which overlaps with the floating gate in a vertical direction; a second coupling unit including a plurality of control plugs which overlap with the floating gate in a horizontal direction; and a control unit which electrically connects the active control gate to the control plugs and controls a bias to be applied to the active control gate.
申请公布号 US2016240544(A1) 申请公布日期 2016.08.18
申请号 US201615141215 申请日期 2016.04.28
申请人 SK hynix Inc. 发明人 PARK Sung-Kun
分类号 H01L27/115;G11C16/26;G11C16/10;H01L29/861;H01L23/535 主分类号 H01L27/115
代理机构 代理人
主权项
地址 Gyeonggi-do KR