发明名称 |
SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURES AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device includes a Fin FET transistor. The Fin FET transistor includes a first fin structure extending in a first direction, a gate stack and a source and a drain. The gate stack includes a gate electrode layer and a gate dielectric layer, covers a portion of the fin structure and extends in a second direction perpendicular to the first direction. Each of the source and drain includes a stressor layer disposed over the fin structure. The stressor layer applies a stress to a channel layer of the fin structure under the gate stack. The stressor layer penetrates under the gate stack. A vertical interface between the stressor layer and the fin structure under the gate stack in a third direction perpendicular to the first and second directions includes a flat portion. |
申请公布号 |
US2016240537(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201514698831 |
申请日期 |
2015.04.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG Che-Cheng;LIN Jr-Jung;LIN Chih-Han |
分类号 |
H01L27/092;H01L29/16;H01L29/161;H01L29/06;H01L29/66;H01L21/306;H01L21/8238;H01L29/165;H01L29/78 |
主分类号 |
H01L27/092 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Hsinchu TW |