发明名称 Method and Apparatus for Planarizing Material Layers
摘要 A processing chamber is disclosed for planarizing material layers (for example, polymer layers). An exemplary processing chamber includes a substrate table configured to support a substrate having a material layer formed thereover and a flattening structure having a substantially flat surface. The flattening structure moves freely with respect to a non-uniform surface of the material layer, such that the non-uniform surface is flattened as the substantially flat surface contacts the non-uniform surface. In some implementations, the processing chamber further includes a pressing mechanism operatively coupled to the flattening structure, and a pivotal interface coupling the flattening structure to the pressing mechanism. The pressing mechanism presses the substantially flat surface of the flattening structure to the non-uniform surface of the material layer, and the pivotal interface allows the flattening structure to pivot with respect to the pressing mechanism and with respect to the substrate.
申请公布号 US2016240404(A1) 申请公布日期 2016.08.18
申请号 US201615139492 申请日期 2016.04.27
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 BURN JENG LIN
分类号 H01L21/67;H01L21/3105 主分类号 H01L21/67
代理机构 代理人
主权项 1. A processing chamber configured for planarizing material layers, the processing chamber comprising: a substrate table configured to support a substrate having a material layer formed thereover; and a flattening structure having a substantially flat surface, wherein the flattening structure is configured to move freely with respect to a non-uniform surface of the material layer, such that the non-uniform surface of the material layer is flattened as the substantially flat surface contacts the non-uniform surface of the material layer.
地址 Hsin-Chu TW