发明名称 |
Method and Apparatus for Planarizing Material Layers |
摘要 |
A processing chamber is disclosed for planarizing material layers (for example, polymer layers). An exemplary processing chamber includes a substrate table configured to support a substrate having a material layer formed thereover and a flattening structure having a substantially flat surface. The flattening structure moves freely with respect to a non-uniform surface of the material layer, such that the non-uniform surface is flattened as the substantially flat surface contacts the non-uniform surface. In some implementations, the processing chamber further includes a pressing mechanism operatively coupled to the flattening structure, and a pivotal interface coupling the flattening structure to the pressing mechanism. The pressing mechanism presses the substantially flat surface of the flattening structure to the non-uniform surface of the material layer, and the pivotal interface allows the flattening structure to pivot with respect to the pressing mechanism and with respect to the substrate. |
申请公布号 |
US2016240404(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201615139492 |
申请日期 |
2016.04.27 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
BURN JENG LIN |
分类号 |
H01L21/67;H01L21/3105 |
主分类号 |
H01L21/67 |
代理机构 |
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代理人 |
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主权项 |
1. A processing chamber configured for planarizing material layers, the processing chamber comprising:
a substrate table configured to support a substrate having a material layer formed thereover; and a flattening structure having a substantially flat surface, wherein the flattening structure is configured to move freely with respect to a non-uniform surface of the material layer, such that the non-uniform surface of the material layer is flattened as the substantially flat surface contacts the non-uniform surface of the material layer. |
地址 |
Hsin-Chu TW |