MODULAR MAGNETORESISTIVE MEMORY

摘要

A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module.

主权项

1. A magnetoresistive memory element, comprising:
a read module having a first pinned layer with a magnetoresistance that is readable by a read current; a write module that receives a write current; and a coupling module adjacent both the write module and the read module, the coupling module having a free layer that functions as a shared storage layer for both the read module and the write module, the shared storage layer receiving spon torque from both the read module and the write module.