SENSOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to a sensor device which has high S/N and excellent temperature characteristics. This sensor device (100) is provided with: a semiconductor substrate (101); a first metal wiring layer (111) that is provided on the semiconductor substrate (101); a first insulating layer (121) that is provided on the first metal wiring layer (111); a compound semiconductor sensor element (131) that is provided on the first insulating layer (121); a second metal wiring layer (112) that is provided on the compound semiconductor sensor element (131) and the first insulating layer (121); and a second insulating layer (122) that is provided on the second metal wiring layer (112). A third insulating layer (123) is provided between the first metal wiring layer (111) and the second metal wiring layer (112), and the compound semiconductor sensor element (131) is provided within the third insulating layer (123).