| 摘要 |
PROBLEM TO BE SOLVED: To provide a carbon-containing silicon oxide film having sufficient hardness and a low dielectric constant on a surface of a substrate.SOLUTION: In a carbon-containing silicon oxide film manufacturing method, a carbon-containing silicon oxide film is formed by applying a high-frequency voltage 19 to a precursor compound 22 vaporized by using a vapor generator 10 and a material gas mixed with an oxygen gas 24 to generate atmospheric-pressure plasma, on a substrate 13 which is subject to a surface temperature of 80-150°C by using heating means 15. The carbon-containing silicon oxide film obtained in the present embodiment perfectly suit for an interlayer insulation film and the like of a semiconductor element because the carbon-containing silicon oxide film obtained in the present embodiment has a dielectric constant of 4 or under and hardness of 3 GPa or over, so that there is less number of voids to which metal such as copper of wiring diffuses and poor connection is unlikely to occur. |
