| 摘要 |
A method is disclosed for co-integration of photonic devices, Ge waveguide-integrated photodetectors and hybrid III-V/Si lasers on a silicon based photonics platform, method comprising:
- providing a planarized silicon based photonics substrate comprising silicon devices including patterned silicon waveguide structures;
- depositing a dielectric layer on top of planarized silicon based photonics substrate;
- etching trenches into said dielectric layer with an appropriate etch depth, reby exposing a patterned silicon waveguide structure of said photonics substrate;
- selective etching of exposed waveguide structure, reby creating a template for Ge growth and leaving a silicon seed layer for Ge growth;
- selectively growing Ge from said seed layer, with a deliberate Ge overgrowth;
- planarizing Ge surface, leaving a Ge layer with a reduced thickness. |
